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14:00 – 16:00 P1.1 P1.2

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Monday, May 29, 2017

Poster Session P1

Mihail Ion Lepsa

Peter Grünberg Institute (PGI-9), Forschungszentrum Jülich, Germany

MBE growth of InAs/Al and InAs/Nb superconducting hybrid nanowire structures

Filip Křížek

Niels Bohr Institute, University of Copenhagen, Denmark

Growth of single crystal InAs - WZ nanowire crosses

Bruno Daudin

CEA-Grenoble, INAC PHELIQS/NPSC, France

Assessment of p-n junction in GaN single NWs by nanocathodoluminescence and electron beam induced current

Luca Gagliano

Eindhoven University of Technology, The Netherlands

Pseudo-direct to direct compositional crossover in wurtzite GaP/InxGa1-xP core-shell nanowires

Alexander Dobrovolsky

Chemical Physics and Nano Lund, Lund University, Sweden

Photoluminescence microscopy of single metal-halide perovskite nanowires: effect of crystal phase transition

Daria Beznasiuk

Université Grenoble-Alpes, F-38000 Grenoble, France

Dislocations free axial InAs-on-GaAs nanowires below critical diameter on Si substrates

Hanno Küpers

Paul-Drude-Institut für Festkörperelektronik, Berlin, Germany

Consequences of the deposition sequence inherent to the growth of

nanowire shells in molecular beam epitaxy

Oscar W. Kennedy

London Centre for Nanotechnology, University College London, United Kingdom MBE growth of ZnO nanowires with perpendicular polar and growth axes

Ning Han

Institute of Process Engineering, Chinese Academy of Sciences, Beijing, China

Orientation dependent photovoltaics of GaAs nanowires

Lert Chayanun

Synchrotron radiation research, Lund University, Sweden

X-ray beam induced current (XBIC) imaging of a single n-i-n doped InGaP

nanowire device

Jung-Hyun Kang

Braun Center for Submicron Research, Weizmann Institute of Science, Rehovot, Israel Reclining InAs nanowires and intersections in-situ side coated with Al

Satoshi Yoshimura

Department of Engineering and Applied Sciences, Sophia University, Tokyo, Japan

Regrown InP/GaInAs core-shell nanowires by self-catalytic VLS mode

Yunyan Zhang

Department of Electronic and Electrical Engineering, University College London, United Kingdom

Growth and applications of self-catalyzed core-shell GaAsP nanowires

Miriam Boehmler

neaspec GmbH, Applications Department, Martinsried, Germany

Nano-analytics: near-field microscopy and spectroscopy with 10 nm spatial resolution

Julian Jakob

Laboratory for Applications of Synchrotron Radiation, Karlsruhe Institute of Technology, Germany

Simultaneous time-resolved in-situ XRD and RHEED study during the growth of GaAs nanowires

Vladislav Khayrudinov

Department of Micro- and Nanosciences, Micronova, Aalto University, Finland

Characterization of GaAs nanowire radial p-n junctions fabricated by lithography-free isolation method

Silvia Rubini

CNR-IOM, Trieste 34149, Italy

Full optical characterization of doping efficiency in MBE grown Te-doped

Image | Postar Session P1



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